Facility/Equipment Details
Description
Field Emission SEM
Detectors: SEI in-lens, LEI, LABE Backscattered, STEM in SEM
Energy Dispersive X-ray Spectrometer (EDS) using Oxford X-max Silicon Drift Detector
Magnification: 25x to 1,000,000X magnification
with resolution of 1.0 nm at 1kV, 0.8nm at 15kV, 0.6 nm at 30kV
Accelerating voltage: 0.1kV to 30kV
JEOL digital camera
Field Emission LaB6 crystal electron gun with High Brightness, Low Energy Spread, High Beam Stability
Gentle Beam mode for top-surface imaging, reduced beam damage and charge suppression.
A standard LABE detector for detecting very low energy and very low angle backscattered electrons.
STEM in SEM - Scanning Transmission Electron Microscopy in an SEM
Detectors: SEI in-lens, LEI, LABE Backscattered, STEM in SEM
Energy Dispersive X-ray Spectrometer (EDS) using Oxford X-max Silicon Drift Detector
Magnification: 25x to 1,000,000X magnification
with resolution of 1.0 nm at 1kV, 0.8nm at 15kV, 0.6 nm at 30kV
Accelerating voltage: 0.1kV to 30kV
JEOL digital camera
Field Emission LaB6 crystal electron gun with High Brightness, Low Energy Spread, High Beam Stability
Gentle Beam mode for top-surface imaging, reduced beam damage and charge suppression.
A standard LABE detector for detecting very low energy and very low angle backscattered electrons.
STEM in SEM - Scanning Transmission Electron Microscopy in an SEM
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