A twinned PbTe film induced by the 7 × 7 reconstruction of Si(1 1 1)

H. Y. Chen, S. S. Dong, Y. K. Yang, D. M. Li, J. H. Zhang, X. J. Wang, S. H. Kan, G. T. Zou

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

The PbTe films were grown on Si(1 1 1) substrate by hot wall epitaxy (HWE). X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to study the films. The results show that the PbTe films are twinned ones with preferred 〈 1 0 0 〉 orientation. The angles of normal direction of PbTe(1 0 0) facets which are perpendicular to the surface of Si substrate are 30° or 60°. The interface energy is calculated by CASTEP module of materials studio and the reason for this phenomenon is discussed.

Original languageEnglish
Pages (from-to)156-160
Number of pages5
JournalJournal of Crystal Growth
Volume273
Issue number1-2
DOIs
StatePublished - Dec 17 2004

Keywords

  • A1. Reconstruction
  • A3. Hot wall epitaxy (HWE)

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