Abstract
The PbTe films were grown on Si(1 1 1) substrate by hot wall epitaxy (HWE). X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to study the films. The results show that the PbTe films are twinned ones with preferred 〈 1 0 0 〉 orientation. The angles of normal direction of PbTe(1 0 0) facets which are perpendicular to the surface of Si substrate are 30° or 60°. The interface energy is calculated by CASTEP module of materials studio and the reason for this phenomenon is discussed.
| Original language | English |
|---|---|
| Pages (from-to) | 156-160 |
| Number of pages | 5 |
| Journal | Journal of Crystal Growth |
| Volume | 273 |
| Issue number | 1-2 |
| DOIs | |
| State | Published - Dec 17 2004 |
Scopus Subject Areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry
Keywords
- A1. Reconstruction
- A3. Hot wall epitaxy (HWE)