Calculating line intensities of 1S0 emission through mixing with 4f5d components in Pr3+-doped SrAl12O19

Feng Liu, Jia hua Zhang, Shao zhe Lu, Shen xin Liu, Shi hua Huang, Xiao jun Wang

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

The line intensities of emission from 4f2 1S0 are calculated in Pr3+-doped SrAl12O19 by considering the mixing of 1S0 state with the corresponding 4f5d components. The products of odd-rank crystal-field parameters Bkq(fd)'s and interconfigurational radial integral r are treated as new parameters and obtained from a best-fit of the calculated and measured relative intensities of transitions from the 1S0 level to the lower J multiplets. The fitted values are B33(fd)r=1.207×10-5 and B53(fd)r=1.522×10-5, which are then used to calculate the line intensities of transitions from the 1S0 to the lower crystal-field levels.

Original languageEnglish
Pages (from-to)434-436
Number of pages3
JournalJournal of Luminescence
Volume122-123
Issue number1-2
DOIs
StatePublished - Jan 2007

Keywords

  • 4f5d configuration
  • Crystal-field levels
  • Line intensities
  • Pr
  • SrAlO

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