Abstract
The line intensities of emission from 4f2 1S0 are calculated in Pr3+-doped SrAl12O19 by considering the mixing of 1S0 state with the corresponding 4f5d components. The products of odd-rank crystal-field parameters Bkq(fd)'s and interconfigurational radial integral r are treated as new parameters and obtained from a best-fit of the calculated and measured relative intensities of transitions from the 1S0 level to the lower J multiplets. The fitted values are B33(fd)r=1.207×10-5 and B53(fd)r=1.522×10-5, which are then used to calculate the line intensities of transitions from the 1S0 to the lower crystal-field levels.
Original language | English |
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Pages (from-to) | 434-436 |
Number of pages | 3 |
Journal | Journal of Luminescence |
Volume | 122-123 |
Issue number | 1-2 |
DOIs | |
State | Published - Jan 2007 |
Keywords
- 4f5d configuration
- Crystal-field levels
- Line intensities
- Pr
- SrAlO