Charge trapping in irradiated SOI wafers measured by second harmonic generation

Bongim Jun; Ronald D. Schrimpf; Daniel M. Fleetwood; Yelena V. White; Robert Pasternak; Sergey N. Rashkeev; Francois Brunier; Nicolas Bresson; Marion Fouillat; Sorin Cristoloveanu; Norman H. Tolk

doi:10.1109/TNS.2004.839140

Charge trapping in irradiated SOI wafers measured by second harmonic generation

Bongim Jun
, Ronald D. Schrimpf
, Daniel M. Fleetwood
, Yelena V. White
, Robert Pasternak
, Sergey N. Rashkeev
, Francois Brunier
, Nicolas Bresson
, Marion Fouillat
, Sorin Cristoloveanu
, Norman H. Tolk

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

Total dose effects on silicon on insulator (SOI) UNIBOND wafers are studied via optical second harmonic generation (SHG). This technique is qualitatively compared with the pseudo-MOSFET technique for monitoring charges at the interfaces. Optical and electrical methods are combined to separate the contribution of the signal from each interface to the total SHG intensity. Radiation-induced oxide and interface traps increase the interface fields as determined from the SHG signals and the results are compared with electrical measurements.

Original language	English
Pages (from-to)	3231-3237
Number of pages	7
Journal	IEEE Transactions on Nuclear Science
Volume	51
Issue number	6 II
DOIs	https://doi.org/10.1109/TNS.2004.839140
State	Published - Dec 2004
Externally published	Yes

Scopus Subject Areas

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

Keywords

Pseudo-MOSFET
Radiation effects
Second harmonic generation (SHG)
Silicon on insulator (SOI)
Total dose
UNIBOND

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10.1109/TNS.2004.839140

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@article{329e7224b2374d09849755424cb7557e,

title = "Charge trapping in irradiated SOI wafers measured by second harmonic generation",

abstract = "Total dose effects on silicon on insulator (SOI) UNIBOND wafers are studied via optical second harmonic generation (SHG). This technique is qualitatively compared with the pseudo-MOSFET technique for monitoring charges at the interfaces. Optical and electrical methods are combined to separate the contribution of the signal from each interface to the total SHG intensity. Radiation-induced oxide and interface traps increase the interface fields as determined from the SHG signals and the results are compared with electrical measurements.",

keywords = "Pseudo-MOSFET, Radiation effects, Second harmonic generation (SHG), Silicon on insulator (SOI), Total dose, UNIBOND",

author = "Bongim Jun and Schrimpf, \{Ronald D.\} and Fleetwood, \{Daniel M.\} and White, \{Yelena V.\} and Robert Pasternak and Rashkeev, \{Sergey N.\} and Francois Brunier and Nicolas Bresson and Marion Fouillat and Sorin Cristoloveanu and Tolk, \{Norman H.\}",

year = "2004",

month = dec,

doi = "10.1109/TNS.2004.839140",

language = "English",

volume = "51",

pages = "3231--3237",

journal = "IEEE Transactions on Nuclear Science",

issn = "0018-9499",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6 II",

}

TY - JOUR

T1 - Charge trapping in irradiated SOI wafers measured by second harmonic generation

AU - Jun, Bongim

AU - Schrimpf, Ronald D.

AU - Fleetwood, Daniel M.

AU - White, Yelena V.

AU - Pasternak, Robert

AU - Rashkeev, Sergey N.

AU - Brunier, Francois

AU - Bresson, Nicolas

AU - Fouillat, Marion

AU - Cristoloveanu, Sorin

AU - Tolk, Norman H.

PY - 2004/12

Y1 - 2004/12

N2 - Total dose effects on silicon on insulator (SOI) UNIBOND wafers are studied via optical second harmonic generation (SHG). This technique is qualitatively compared with the pseudo-MOSFET technique for monitoring charges at the interfaces. Optical and electrical methods are combined to separate the contribution of the signal from each interface to the total SHG intensity. Radiation-induced oxide and interface traps increase the interface fields as determined from the SHG signals and the results are compared with electrical measurements.

AB - Total dose effects on silicon on insulator (SOI) UNIBOND wafers are studied via optical second harmonic generation (SHG). This technique is qualitatively compared with the pseudo-MOSFET technique for monitoring charges at the interfaces. Optical and electrical methods are combined to separate the contribution of the signal from each interface to the total SHG intensity. Radiation-induced oxide and interface traps increase the interface fields as determined from the SHG signals and the results are compared with electrical measurements.

KW - Pseudo-MOSFET

KW - Radiation effects

KW - Second harmonic generation (SHG)

KW - Silicon on insulator (SOI)

KW - Total dose

KW - UNIBOND

UR - https://www.scopus.com/pages/publications/19944389539

U2 - 10.1109/TNS.2004.839140

DO - 10.1109/TNS.2004.839140

M3 - Article

AN - SCOPUS:19944389539

SN - 0018-9499

VL - 51

SP - 3231

EP - 3237

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

IS - 6 II

ER -

Charge trapping in irradiated SOI wafers measured by second harmonic generation

Abstract

Scopus Subject Areas

Keywords

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