Effect of electron-transfer quenching on the photoluminescence of Pr3+ in MgXO3 (X =Ge, Si)

Xiao Huang; Xiyu Zhao; Zengchao Yu; Yichun Liu; Aiying Wang; Xiao Jun Wang; Feng Liu

doi:10.1364/OME.389599

Effect of electron-transfer quenching on the photoluminescence of Pr³⁺ in MgXO₃ (X =Ge, Si)

Xiao Huang
, Xiyu Zhao
, Zengchao Yu
, Yichun Liu
, Aiying Wang
, Xiao Jun Wang
, Feng Liu

Biochemistry, Chemistry & Physics

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

Understanding the effect of electron-transfer quenching on the photoluminescence (PL) of phosphors is important but often underestimated. Here we study the PL of two Pr³⁺-doped phosphors, MgGeO₃:Pr and MgSiO₃:Pr, which share analogous chemical formulas but exhibit different PL performances. Ultraviolet and red emissions dominate the PL of MgSiO₃:Pr at room temperature, while the ultraviolet emission is absent in MgGeO₃:Pr. A photoionization experiment, which is based on thermoluminescence excitation spectroscopy, reveals that an impurity-trapped exciton state quenches the 4f5d state of Pr³⁺ in MgGeO₃. We believe that the present experimental approach, as well as the associated physical insight on the electron-transfer quenching, is generally applicable for many existing phosphors.

Original language	English
Article number	9599
Pages (from-to)	1163-1168
Number of pages	6
Journal	Optical Materials Express
Volume	10
Issue number	5
DOIs	https://doi.org/10.1364/OME.389599
State	Published - May 1 2020

Scopus Subject Areas

Electronic, Optical and Magnetic Materials

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10.1364/OME.389599

Cite this

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title = "Effect of electron-transfer quenching on the photoluminescence of Pr3+ in MgXO3 (X =Ge, Si)",

abstract = "Understanding the effect of electron-transfer quenching on the photoluminescence (PL) of phosphors is important but often underestimated. Here we study the PL of two Pr3+-doped phosphors, MgGeO3:Pr and MgSiO3:Pr, which share analogous chemical formulas but exhibit different PL performances. Ultraviolet and red emissions dominate the PL of MgSiO3:Pr at room temperature, while the ultraviolet emission is absent in MgGeO3:Pr. A photoionization experiment, which is based on thermoluminescence excitation spectroscopy, reveals that an impurity-trapped exciton state quenches the 4f5d state of Pr3+ in MgGeO3. We believe that the present experimental approach, as well as the associated physical insight on the electron-transfer quenching, is generally applicable for many existing phosphors.",

author = "Xiao Huang and Xiyu Zhao and Zengchao Yu and Yichun Liu and Aiying Wang and Wang, \{Xiao Jun\} and Feng Liu",

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TY - JOUR

T1 - Effect of electron-transfer quenching on the photoluminescence of Pr3+ in MgXO3 (X =Ge, Si)

AU - Huang, Xiao

AU - Zhao, Xiyu

AU - Yu, Zengchao

AU - Liu, Yichun

AU - Wang, Aiying

AU - Wang, Xiao Jun

AU - Liu, Feng

PY - 2020/5/1

Y1 - 2020/5/1

N2 - Understanding the effect of electron-transfer quenching on the photoluminescence (PL) of phosphors is important but often underestimated. Here we study the PL of two Pr3+-doped phosphors, MgGeO3:Pr and MgSiO3:Pr, which share analogous chemical formulas but exhibit different PL performances. Ultraviolet and red emissions dominate the PL of MgSiO3:Pr at room temperature, while the ultraviolet emission is absent in MgGeO3:Pr. A photoionization experiment, which is based on thermoluminescence excitation spectroscopy, reveals that an impurity-trapped exciton state quenches the 4f5d state of Pr3+ in MgGeO3. We believe that the present experimental approach, as well as the associated physical insight on the electron-transfer quenching, is generally applicable for many existing phosphors.

AB - Understanding the effect of electron-transfer quenching on the photoluminescence (PL) of phosphors is important but often underestimated. Here we study the PL of two Pr3+-doped phosphors, MgGeO3:Pr and MgSiO3:Pr, which share analogous chemical formulas but exhibit different PL performances. Ultraviolet and red emissions dominate the PL of MgSiO3:Pr at room temperature, while the ultraviolet emission is absent in MgGeO3:Pr. A photoionization experiment, which is based on thermoluminescence excitation spectroscopy, reveals that an impurity-trapped exciton state quenches the 4f5d state of Pr3+ in MgGeO3. We believe that the present experimental approach, as well as the associated physical insight on the electron-transfer quenching, is generally applicable for many existing phosphors.

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U2 - 10.1364/OME.389599

DO - 10.1364/OME.389599

M3 - Article

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SN - 2159-3930

VL - 10

SP - 1163

EP - 1168

JO - Optical Materials Express

JF - Optical Materials Express

IS - 5

M1 - 9599

ER -

Effect of electron-transfer quenching on the photoluminescence of Pr³⁺ in MgXO₃ (X =Ge, Si)

Abstract

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