Effect of thermal treatment on the band offsets and interfacial properties of HfOxNy gate dielectrics
- M. Liu
- , L. D. Zhang
- , Q. Fang
- , J. P. Zhang
- , X. J. Wang
- , G. He
- CAS - Institute of Solid State Physics
- Oxford Instruments plc, UK
Research output: Contribution to journal › Article › peer-review
11
Scopus
citations