Effects of postdeposition annealing on the structure and optical properties of y Ox Ny films

X. J. Wang; L. D. Zhang; G. He; J. P. Zhang; M. Liu; L. Q. Zhu

doi:10.1063/1.2890987

Effects of postdeposition annealing on the structure and optical properties of y O_x N_y films

X. J. Wang, L. D. Zhang, G. He, J. P. Zhang, M. Liu, L. Q. Zhu

Biochemistry, Chemistry & Physics

CAS - Institute of Solid State Physics

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

High- k gate dielectric Y Ox Ny films were prepared by reactive sputtering. The effects of postdeposition annealing on the structure and optical properties of Y Ox Ny films have been investigated. The x-ray diffraction result shows that the crystallization starts at the annealing temperature of 500 °C. Spectroscopic ellipsometry was employed to determine the optical properties of a set of Y Ox Ny films annealed at various temperatures. It was found that the refractive index (n) of Y Ox Ny films decreased with the increase of annealing temperature below 600 °C, whereas it increased with increasing annealing temperature above 600 °C. The annealingerature dependence of the optical band gap of Y Ox Ny films was also discussed in detail. It has indicated that the optical band gap of Y Ox Ny films shifts to higher energy after higher temperature annealing, which is likely due to the reduction of N content and the change of crystalline structure in Y Ox Ny films.

Original language	English
Article number	064101
Journal	Journal of Applied Physics
Volume	103
Issue number	6
DOIs	https://doi.org/10.1063/1.2890987
State	Published - 2008

Scopus Subject Areas

General Physics and Astronomy

Access to Document

10.1063/1.2890987

Cite this

@article{e5a353d3fc9e4af3826e0b3f1a5357f7,

title = "Effects of postdeposition annealing on the structure and optical properties of y Ox Ny films",

abstract = "High- k gate dielectric Y Ox Ny films were prepared by reactive sputtering. The effects of postdeposition annealing on the structure and optical properties of Y Ox Ny films have been investigated. The x-ray diffraction result shows that the crystallization starts at the annealing temperature of 500 °C. Spectroscopic ellipsometry was employed to determine the optical properties of a set of Y Ox Ny films annealed at various temperatures. It was found that the refractive index (n) of Y Ox Ny films decreased with the increase of annealing temperature below 600 °C, whereas it increased with increasing annealing temperature above 600 °C. The annealingerature dependence of the optical band gap of Y Ox Ny films was also discussed in detail. It has indicated that the optical band gap of Y Ox Ny films shifts to higher energy after higher temperature annealing, which is likely due to the reduction of N content and the change of crystalline structure in Y Ox Ny films.",

author = "Wang, {X. J.} and Zhang, {L. D.} and G. He and Zhang, {J. P.} and M. Liu and Zhu, {L. Q.}",

year = "2008",

doi = "10.1063/1.2890987",

language = "English",

volume = "103",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "6",

}

TY - JOUR

T1 - Effects of postdeposition annealing on the structure and optical properties of y Ox Ny films

AU - Wang, X. J.

AU - Zhang, L. D.

AU - He, G.

AU - Zhang, J. P.

AU - Liu, M.

AU - Zhu, L. Q.

PY - 2008

Y1 - 2008

N2 - High- k gate dielectric Y Ox Ny films were prepared by reactive sputtering. The effects of postdeposition annealing on the structure and optical properties of Y Ox Ny films have been investigated. The x-ray diffraction result shows that the crystallization starts at the annealing temperature of 500 °C. Spectroscopic ellipsometry was employed to determine the optical properties of a set of Y Ox Ny films annealed at various temperatures. It was found that the refractive index (n) of Y Ox Ny films decreased with the increase of annealing temperature below 600 °C, whereas it increased with increasing annealing temperature above 600 °C. The annealingerature dependence of the optical band gap of Y Ox Ny films was also discussed in detail. It has indicated that the optical band gap of Y Ox Ny films shifts to higher energy after higher temperature annealing, which is likely due to the reduction of N content and the change of crystalline structure in Y Ox Ny films.

AB - High- k gate dielectric Y Ox Ny films were prepared by reactive sputtering. The effects of postdeposition annealing on the structure and optical properties of Y Ox Ny films have been investigated. The x-ray diffraction result shows that the crystallization starts at the annealing temperature of 500 °C. Spectroscopic ellipsometry was employed to determine the optical properties of a set of Y Ox Ny films annealed at various temperatures. It was found that the refractive index (n) of Y Ox Ny films decreased with the increase of annealing temperature below 600 °C, whereas it increased with increasing annealing temperature above 600 °C. The annealingerature dependence of the optical band gap of Y Ox Ny films was also discussed in detail. It has indicated that the optical band gap of Y Ox Ny films shifts to higher energy after higher temperature annealing, which is likely due to the reduction of N content and the change of crystalline structure in Y Ox Ny films.

UR - http://www.scopus.com/inward/record.url?scp=41549146291&partnerID=8YFLogxK

U2 - 10.1063/1.2890987

DO - 10.1063/1.2890987

M3 - Article

AN - SCOPUS:41549146291

SN - 0021-8979

VL - 103

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 6

M1 - 064101

ER -

Effects of postdeposition annealing on the structure and optical properties of y O_x N_y films

Abstract

Scopus Subject Areas

Access to Document

Other files and links

Fingerprint

Cite this