Abstract
This paper has mainly studied the resonant behaviour of multi-order Raman spectra in Ga1-xAlxAs at different temperatures. The physical mechanism about the enhancement of the second and the higher order Raman scattering is analysed, and a new evidence for the possible intermediate state of Raman scattering - an exciton-LO phonon complex is given. Also, the anti-resonant phenomenon of TO-phonon under near-resonant condition has been discussed by analysing scattering tensors.
| Original language | English |
|---|---|
| Pages (from-to) | 176-181 |
| Number of pages | 6 |
| Journal | Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors |
| Volume | 11 |
| Issue number | 3 |
| State | Published - Mar 1990 |
Scopus Subject Areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry