Site Occupancy and VUV-UV-Vis Photoluminescence of the Lanthanide Ions in BaY2Si3O10

Rui Shi, Xiaojun Wang, Yan Huang, Ye Tao, Lirong Zheng, Hongbin Liang

Research output: Contribution to journalSystematic reviewpeer-review

21 Scopus citations

Abstract

This work provides a scheme to investigate the site occupancy and the luminescence properties of lanthanide ions in BaY2Si3O10. The Rietveld refinement of the samples indicates that the lanthanide ions preferably occupy the Y3+ sites in BaY2Si3O10. It is confirmed that valence state of lanthanide ions is stable at +3 in all doping samples. The site-dependent spectroscopic properties of Ce3+ and Eu3+ are studied in VUV-UV-vis spectral region at low temperatures, and the polarization effect on Ce3+ luminescence decay is evaluated. The results indicate that the lanthanide ions experience the similar polarization effect when substituting the Y3+ sites in BaY2Si3O10. The Stokes shift of Ce3+ luminescence becomes larger as Ce3+ doping content increases. Eu3+ f-f line-shape change has not been observed in the spectra as Eu3+ content increases. It demonstrates that the change of the electrostatic binding effect in the lattice has little effect on the ligand polarization of the central lanthanide ion. Finally, a mechanism is proposed to explain why the thermal-quenching of Ce3+ luminescence is negligible in BaY2Si3O10 even if the temperature increases up to 500 K. The influence of dynamic ion-lattice interaction on luminescence properties of the lanthanide ions in BaY2Si3O10 is discussed in detail.

Original languageEnglish
Pages (from-to)7421-7431
Number of pages11
JournalJournal of Physical Chemistry C
Volume122
Issue number13
DOIs
StatePublished - Apr 5 2018

Scopus Subject Areas

  • Electronic, Optical and Magnetic Materials
  • General Energy
  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films

Fingerprint

Dive into the research topics of 'Site Occupancy and VUV-UV-Vis Photoluminescence of the Lanthanide Ions in BaY2Si3O10'. Together they form a unique fingerprint.

Cite this