Structural, optical properties and band gap alignments of ZrOxNy thin films on Si (1 0 0) by radio frequency sputtering at different deposition temperatures

L. Q. Zhu; Q. Fang; X. J. Wang; J. P. Zhang; M. Liu; G. He; L. D. Zhang

doi:10.1016/j.apsusc.2008.02.073

Structural, optical properties and band gap alignments of ZrO_xN_y thin films on Si (1 0 0) by radio frequency sputtering at different deposition temperatures

L. Q. Zhu, Q. Fang, X. J. Wang, J. P. Zhang, M. Liu, G. He, L. D. Zhang

Biochemistry, Chemistry, & Physics

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

ZrO_xN_y thin films have been prepared by radio frequency magnetron sputtering at various substrate temperatures. The effect of substrate temperature on structural, optical properties and energy-band alignments of as-deposited ZrO_xN_y thin films are investigated. Atomic force microscopy results indicate the decreased root-mean-square (rms) values with substrate temperature. Fourier transform infrared spectroscopy spectra indicate that an interfacial layer has been formed between Si substrate and ZrO_xN_y thin films during deposition. X-ray photoelectron spectroscopy and spectroscopy ellipsometry (SE) results indicate the increased nitrogen incorporation in ZrO_xN_y thin films and therefore, the decreased optical band gap (E_g) values as a result of the increased valence-band maximum and lowered conduction-band minimum.

Original language	English
Pages (from-to)	5439-5444
Number of pages	6
Journal	Applied Surface Science
Volume	254
Issue number	17
DOIs	https://doi.org/10.1016/j.apsusc.2008.02.073
State	Published - Jun 30 2008

Keywords

Band-offset
Spectroscopy ellipsometry
Sputtering
X-ray photoelectron spectroscopy (XPS)

Access to Document

10.1016/j.apsusc.2008.02.073

Cite this

@article{9e8115f6af4c4b17802aee51a35acace,

title = "Structural, optical properties and band gap alignments of ZrOxNy thin films on Si (1 0 0) by radio frequency sputtering at different deposition temperatures",

abstract = "ZrOxNy thin films have been prepared by radio frequency magnetron sputtering at various substrate temperatures. The effect of substrate temperature on structural, optical properties and energy-band alignments of as-deposited ZrOxNy thin films are investigated. Atomic force microscopy results indicate the decreased root-mean-square (rms) values with substrate temperature. Fourier transform infrared spectroscopy spectra indicate that an interfacial layer has been formed between Si substrate and ZrOxNy thin films during deposition. X-ray photoelectron spectroscopy and spectroscopy ellipsometry (SE) results indicate the increased nitrogen incorporation in ZrOxNy thin films and therefore, the decreased optical band gap (Eg) values as a result of the increased valence-band maximum and lowered conduction-band minimum.",

keywords = "Band-offset, Spectroscopy ellipsometry, Sputtering, X-ray photoelectron spectroscopy (XPS)",

author = "Zhu, {L. Q.} and Q. Fang and Wang, {X. J.} and Zhang, {J. P.} and M. Liu and G. He and Zhang, {L. D.}",

year = "2008",

month = jun,

day = "30",

doi = "10.1016/j.apsusc.2008.02.073",

language = "English",

volume = "254",

pages = "5439--5444",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier B.V.",

number = "17",

}

TY - JOUR

T1 - Structural, optical properties and band gap alignments of ZrOxNy thin films on Si (1 0 0) by radio frequency sputtering at different deposition temperatures

AU - Zhu, L. Q.

AU - Fang, Q.

AU - Wang, X. J.

AU - Zhang, J. P.

AU - Liu, M.

AU - He, G.

AU - Zhang, L. D.

PY - 2008/6/30

Y1 - 2008/6/30

N2 - ZrOxNy thin films have been prepared by radio frequency magnetron sputtering at various substrate temperatures. The effect of substrate temperature on structural, optical properties and energy-band alignments of as-deposited ZrOxNy thin films are investigated. Atomic force microscopy results indicate the decreased root-mean-square (rms) values with substrate temperature. Fourier transform infrared spectroscopy spectra indicate that an interfacial layer has been formed between Si substrate and ZrOxNy thin films during deposition. X-ray photoelectron spectroscopy and spectroscopy ellipsometry (SE) results indicate the increased nitrogen incorporation in ZrOxNy thin films and therefore, the decreased optical band gap (Eg) values as a result of the increased valence-band maximum and lowered conduction-band minimum.

AB - ZrOxNy thin films have been prepared by radio frequency magnetron sputtering at various substrate temperatures. The effect of substrate temperature on structural, optical properties and energy-band alignments of as-deposited ZrOxNy thin films are investigated. Atomic force microscopy results indicate the decreased root-mean-square (rms) values with substrate temperature. Fourier transform infrared spectroscopy spectra indicate that an interfacial layer has been formed between Si substrate and ZrOxNy thin films during deposition. X-ray photoelectron spectroscopy and spectroscopy ellipsometry (SE) results indicate the increased nitrogen incorporation in ZrOxNy thin films and therefore, the decreased optical band gap (Eg) values as a result of the increased valence-band maximum and lowered conduction-band minimum.

KW - Band-offset

KW - Spectroscopy ellipsometry

KW - Sputtering

KW - X-ray photoelectron spectroscopy (XPS)

UR - http://www.scopus.com/inward/record.url?scp=43849093872&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2008.02.073

DO - 10.1016/j.apsusc.2008.02.073

M3 - Article

AN - SCOPUS:43849093872

SN - 0169-4332

VL - 254

SP - 5439

EP - 5444

JO - Applied Surface Science

JF - Applied Surface Science

IS - 17

ER -

Structural, optical properties and band gap alignments of ZrO_xN_y thin films on Si (1 0 0) by radio frequency sputtering at different deposition temperatures

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this