TY - JOUR
T1 - Structure, Luminescence, and Application of a Robust Carbidonitride Blue Phosphor (Al1-xSixCxN1-x:Eu2+) for Near UV-LED Driven Solid State Lighting
AU - Wang, Le
AU - Wang, Xiaojun
AU - Takeda, Takashi
AU - Hirosaki, Naoto
AU - Tsai, Yi Ting
AU - Liu, Ru Shi
AU - Xie, Rong Jun
N1 - Publisher Copyright:
© 2015 American Chemical Society.
PY - 2015/12/22
Y1 - 2015/12/22
N2 - As an extension of nitride luminescent materials, carbidonitride phosphors are also attracting great attention due to their superior thermal stability. This paper reports a blue-emitting carbidonitride phosphor Al1-xSixCxN1-x:Eu2+ suitable for near ultraviolet (UV) light emitting diodes (LEDs), which is formulated by introducing SiC into AlN:Eu2+. With the introduction of carbon (silicon), the lattice abnormally shrinks along both a- and c-axes at low x values (x ≥ 0.08), due to the formation of a dense interlayer for accommodating the luminescence center Eu2+. Both of the Raman spectra and solid state NMR spectroscopy show that both Si and C are dissolved in the AlN lattice. A single blue emission band (em = 472-477 nm) is observed for compositions of x > 0.05 by cathodoluminescence measurements. Under the 365 nm excitation, the maximum luminescence is attained for the composition of x = 0.06 that has an external quantum efficiency of 61% and absorption efficiency of 74.4%, which is about 11-15% higher than the corresponding carbon-free nitride sample. The thermal quenching of Al1-xSixCxN1-x:Eu2+ reduces with increasing C (SiC) content, and the sample of x = 0.06 shows a small loss of 4.0% in quantum efficiency even at 200 °C. Using this phosphor in a near UV-driven white LED, a superhigh color rendering index of Ra = 95.3 and R9 = 72 as well as a color temperature of 3533 K are achieved.
AB - As an extension of nitride luminescent materials, carbidonitride phosphors are also attracting great attention due to their superior thermal stability. This paper reports a blue-emitting carbidonitride phosphor Al1-xSixCxN1-x:Eu2+ suitable for near ultraviolet (UV) light emitting diodes (LEDs), which is formulated by introducing SiC into AlN:Eu2+. With the introduction of carbon (silicon), the lattice abnormally shrinks along both a- and c-axes at low x values (x ≥ 0.08), due to the formation of a dense interlayer for accommodating the luminescence center Eu2+. Both of the Raman spectra and solid state NMR spectroscopy show that both Si and C are dissolved in the AlN lattice. A single blue emission band (em = 472-477 nm) is observed for compositions of x > 0.05 by cathodoluminescence measurements. Under the 365 nm excitation, the maximum luminescence is attained for the composition of x = 0.06 that has an external quantum efficiency of 61% and absorption efficiency of 74.4%, which is about 11-15% higher than the corresponding carbon-free nitride sample. The thermal quenching of Al1-xSixCxN1-x:Eu2+ reduces with increasing C (SiC) content, and the sample of x = 0.06 shows a small loss of 4.0% in quantum efficiency even at 200 °C. Using this phosphor in a near UV-driven white LED, a superhigh color rendering index of Ra = 95.3 and R9 = 72 as well as a color temperature of 3533 K are achieved.
UR - http://www.scopus.com/inward/record.url?scp=84951766623&partnerID=8YFLogxK
U2 - 10.1021/acs.chemmater.5b04384
DO - 10.1021/acs.chemmater.5b04384
M3 - Article
AN - SCOPUS:84951766623
SN - 0897-4756
VL - 27
SP - 8457
EP - 8466
JO - Chemistry of Materials
JF - Chemistry of Materials
IS - 24
ER -