The chemical and electronic structures of y Ox Ny on Si(100)

Effects of nitrogen incorporation on interfacial property, band gap, and band alignments of high- k Y2 O3 gate dielectrics have been investigated. It was found that the incorporation of nitrogen into Y2 O3 films can effectively suppress the growth of the interfacial layer between Y2 O3 and Si substrate. The incorporation of nitrogen into Y2 O3 films leads to the reduction of band gap and valence band offset, but not the conduction offset of Y2 O3 films. High temperature annealing will help to increase the band gap and valence band offset of Y Ox Ny film due to the release of the interstitial N atoms.