The effect of nitrogen concentration on the band gap and band offsets of HfOxNy gate dielectrics

X. J. Wang; L. D. Zhang; M. Liu; J. P. Zhang; G. He

doi:10.1063/1.2903097

The effect of nitrogen concentration on the band gap and band offsets of HfO_xN_y gate dielectrics

X. J. Wang, L. D. Zhang, M. Liu, J. P. Zhang, G. He

Biochemistry, Chemistry, & Physics

CAS - Institute of Solid State Physics

Research output: Contribution to journal › Article › peer-review

45 Scopus citations

Abstract

The effect of N concentration on the band gap and band offsets of Hf Ox Ny films has been systematically investigated. It was found that the band gap as well as the band offsets of Hf Ox Ny films decreased with the increase of N concentration. When the N concentration reached 16.3%, the conduction band offset (Δ Ec) reduced to be 0.88 eV, which is smaller than the minimal requirement of Δ Ec values for high- k dielectrics and, thus, leads to unacceptably high leakage currents. Therefore, nitrogen concentration should be carefully controlled to guarantee excellent properties of nitrogen incorporated high- k dielectrics.

Original language	English
Article number	122901
Journal	Applied Physics Letters
Volume	92
Issue number	12
DOIs	https://doi.org/10.1063/1.2903097
State	Published - 2008

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abstract = "The effect of N concentration on the band gap and band offsets of Hf Ox Ny films has been systematically investigated. It was found that the band gap as well as the band offsets of Hf Ox Ny films decreased with the increase of N concentration. When the N concentration reached 16.3%, the conduction band offset (Δ Ec) reduced to be 0.88 eV, which is smaller than the minimal requirement of Δ Ec values for high- k dielectrics and, thus, leads to unacceptably high leakage currents. Therefore, nitrogen concentration should be carefully controlled to guarantee excellent properties of nitrogen incorporated high- k dielectrics.",

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AU - Liu, M.

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AU - He, G.

PY - 2008

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AB - The effect of N concentration on the band gap and band offsets of Hf Ox Ny films has been systematically investigated. It was found that the band gap as well as the band offsets of Hf Ox Ny films decreased with the increase of N concentration. When the N concentration reached 16.3%, the conduction band offset (Δ Ec) reduced to be 0.88 eV, which is smaller than the minimal requirement of Δ Ec values for high- k dielectrics and, thus, leads to unacceptably high leakage currents. Therefore, nitrogen concentration should be carefully controlled to guarantee excellent properties of nitrogen incorporated high- k dielectrics.

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The effect of nitrogen concentration on the band gap and band offsets of HfO_xN_y gate dielectrics

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