Ultraviolet-B persistent luminescence and thermoluminescence of bismuth ion doped garnet phosphors

Hongxu Sun, Qingqing Gao, Aiying Wang, Yichun Liu, Xiao Jun Wang, Feng Liu

Research output: Contribution to journalArticlepeer-review

31 Scopus citations

Abstract

Ultraviolet persistent luminescence technology holds potential for some new applications where ultraviolet emission is needed but constant external excitation is unavailable. Despite the promising applications, not much is known about such luminescence. Here we report ultraviolet-B (290-320 nm) persistent luminescence phenomenon in isostructural Y3Ga5O12:Bi3+ and Y3Ga5O12:Bi3+ phosphors. We further investigate the luminescence by measuring thermoluminescence of the two phosphors. Our spectral results indicate that conventional thermoluminescence measurement cannot directly evaluate the electron population in the traps of Y3Ga5O12:Bi3+, in which the ultraviolet emission is suppressed at high temperature due to a thermal ionization quenching. We believe that the insight of the present trap performance is transferable to other ultraviolet persistent phosphors.

Original languageEnglish
Pages (from-to)1296-1302
Number of pages7
JournalOptical Materials Express
Volume10
Issue number5
DOIs
StatePublished - 2020

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